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DMG6601LVT-7
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ManufacturerDiodes Incorporated
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Manufacturer's Part NumberDMG6601LVT-7
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DescriptionN-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.8 A; JESD-609 Code: e3; Reference Standard: AEC-Q101;
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Datasheet
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DetailsDMG6601LVT-7 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.8 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .055 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | DMG6601LVT-7DICT DMG6601LVT-7DITR DMG6601LVT-7DIDKR DMG6601LVT7 |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
