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MMBFJ112

Manufacturer

National Semiconductor
Manufacturer's Part Number

MMBFJ112
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
Datasheet

Datasheet

Not In Stock

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MMBFJ112 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-236AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel

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MMBFJ112 Technical Details

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