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QTY	Unit Price	Ext Price
1,121	$0.076	$85.196

BSS123W

Manufacturer

Yangzhou Yangjie Electronics
Manufacturer's Part Number

BSS123W
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1121 In Stock

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BSS123W Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.2 W
Maximum Drain-Source On Resistance:	5 ohm
Maximum Feedback Capacitance (Crss):	5 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Peak Reflow Temperature (C):	NOT SPECIFIED

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BSS123W

1121 In Stock

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BSS123W Technical Details

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