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BSS84

Manufacturer

Lite-on Semiconductor
Manufacturer's Part Number

BSS84
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
Datasheet

Datasheet

3644 In Stock

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1N4148

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RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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M39029/58-360

Tri-star Electronics International

CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;

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M39029/56351

Souriau

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;

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LM107H/883C

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;

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SSL-LXA228SRC-TR11

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SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.

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0462-201-16141

TE Connectivity

TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.

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SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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MBR0540T1G

Onsemi

MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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BSS138

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

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FDLL4148

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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ECS-.327-12.5-17X-TR

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ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.

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BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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BSS84 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.13 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	10 ohm

Category Top Products

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Vishay Intertechnology's IRFL9110TRPBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.

IRLML6302TRPBF

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IRLML6302TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.78A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This small outline transistor has a built-in diode and matte tin finish for surface mount installation.

FDC6305N

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BSS316NH6327XTSA1

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BSS316NH6327XTSA1 by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 1.4A max drain current. It features a built-in diode, 0.16 ohm on-resistance, and 7pF feedback capacitance. Ideal for applications requiring small outline packages in enhancement mode operation.

2N7002T-7-F

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2N7002T-7-F by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, making it suitable for surface mount designs in various electronic devices.

FDN337N

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Onsemi's FDN337N is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.2A, 0.065 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C temperature, making it suitable for various electronic devices.

BSS138K

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BSS138K by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage and 0.22A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, this MOSFET has 2.5 ohm max drain-source resistance and matte tin terminal finish.

IRFL9110TRPBF

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BSS84

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P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .13 A; Minimum Operating Temperature: -55 Cel;

BS170_D75Z

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BS170_D75Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 0.83W power dissipation at 150°C.

BVSS138LT1G

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BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.

BC548B

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NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

2N7002T

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Terminal Finish: Matte Tin (Sn);

2N7002K

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 2 ohm;

FDV301ND87Z

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FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.

2N7002,235

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2N7002,235 by Nexperia is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A ID. It's used for switching applications in enhancement mode, featuring a built-in diode. With a max operating temp of 150°C, it's ideal for surface mount designs requiring small outline packages.

FDG6332C

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The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.

Bulk

BSS84

3644 In Stock

Popular Products

1N4148

1N4148

1N4148

2N2222A

2N2222A

M39029/58-360

M39029/56351

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SSL-LXA228SRC-TR11

0462-201-16141

SMBJ18CA

MBR0540T1G

BAV99

BSS138

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FDLL4148

ECS-.327-12.5-17X-TR

BSS138

SS14

1N4148

BSS84 Technical Details

Category Top Products

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BSS84

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FDG6332C

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ZXM61N02FTA