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BS170
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ManufacturerItt Semiconductor
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Manufacturer's Part NumberBS170
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN LEAD;
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Datasheet
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DetailsBS170 Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | .3 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .83 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 5 ohm |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .5 A |