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QTY	Unit Price	Ext Price
6,950	$0.056	$389.548

BS170

Manufacturer

Vishay Semiconductors
Manufacturer's Part Number

BS170
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; No. of Elements: 1; Transistor Application: SWITCHING;
Datasheet

Datasheet

6950 In Stock

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NUP2105LT1G

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NC7WZ17P6X

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RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

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1N4148WS

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SZNUP2105LT1G

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SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

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M39029/58360

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CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;

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SMBJ18CA

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1N4148WS

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1N4148

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BSS138

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1N4148WT

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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BS170 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
JEDEC-95 Code:	TO-226AA
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1

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NDS331N

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NDS332P

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NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.

BSS138BKT116

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SI2309CDS-T1-GE3

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SI2309CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W and operates b/w -55 to 150 °C temperature range.

FDC6321C

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SI9926CDY-T1-GE3

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Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.

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Bulk

BS170

6950 In Stock

Popular Products

LL4148

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SZNUP2105LT1G

M39029/58360

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BSS138

LL4148-GS08

1N4148WT

BS170 Technical Details

Category Top Products

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