Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LND150N3-G

Manufacturer

Microchip Technology
Manufacturer's Part Number

LND150N3-G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .74 W; No. of Terminals: 3; Maximum Drain Current (ID): .03 A;
Datasheet

Datasheet

Not In Stock

Popular Products

LM107H/883

Linear Technology

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

Details

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

Details

LM2931Z-5.0G

Onsemi

LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.

Details

RK73H2ATTD10R0F

Koa Speer Electronics

RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.

Details

SMBJ18CA

Concord Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;

Details

TM4C1294NCPDTI3

Texas Instruments

TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.

Details

FDLL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

CRCW06030000Z0EAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.

Details

LM7805CT/NOPB

Texas Instruments

LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.

Details

BAV99

Vishay Intertechnology

Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.

Details

1N4148

Toshiba

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Goodwork Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358AN

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148WS

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Texas Instruments

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148WS

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

Details

FDLL4148

Onsemi

FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.

Details

LND150N3-G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.03 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.74 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.74 W
Maximum Drain-Source On Resistance:	1000 ohm
Maximum Feedback Capacitance (Crss):	1 pF
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified

Category Top Products

2N7002K

Rectron

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;

FDN338P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;

2N7000-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;

SN7002WH6327XTSA1

Infineon Technologies

Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

SI4447ADY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4447ADY-T1-GE3 is a P-channel FET with 40V breakdown voltage and 7.2A drain current. Ideal for switching applications, it features a built-in diode, 0.045 ohm on-resistance, and operates in enhancement mode at up to 150°C.

BSS138-G

Onsemi

BSS138-G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.22A and on-resistance of 6 ohm, it can handle up to 0.36W power dissipation efficiently.

TN2404K-T1-E3

Vishay Intertechnology

Vishay Intertechnology TN2404K-T1-E3 is a N-CHANNEL FET with 240V DS Breakdown Voltage, 0.2A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.

BSS138P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;

NTJD4401NT1G

Onsemi

NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.

BSS159NH6327XTSA2

Infineon Technologies

Infineon's BSS159NH6327XTSA2 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A ID, and 3.5Ω RDS(on). Ideal for depletion mode operation in small outline packages, it features a built-in diode and low feedback capacitance of 5.9pF.

2N7002BK,215

NXP Semiconductors

NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.

2N7002K

Kodenshi Auk

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

BSS131E6327

Infineon Technologies

Infineon BSS131E6327 is a N-CHANNEL FET with 240V DS breakdown voltage, 0.11A drain current, and 14 ohm on-resistance. Ideal for small signal applications, it operates in enhancement mode with a max power dissipation of 0.36W. Its GULL WING terminals and compact design make it suitable for surface mount configurations.

FDS4935BZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;

2N7002KW

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA-LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

MMBF170LT3

Onsemi

MMBF170LT3 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 0.225W power dissipation, it offers reliable performance in small outline packages.

FDC658AP

Onsemi

The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.

LND150N3-G

Not In Stock

Popular Products

LM107H/883

2N7002

BSS138

LM2931Z-5.0G

RK73H2ATTD10R0F

SMBJ18CA

TM4C1294NCPDTI3

FDLL4148

CRCW06030000Z0EAHP

LM7805CT/NOPB

BAV99

1N4148

SS14

LM358AN

1N4148WS

LM358N

ULN-2803A

1N4148WS

2N7002

FDLL4148

LND150N3-G Technical Details

Category Top Products

2N7002K

FDN338P

2N7000-G

SN7002WH6327XTSA1

SI4447ADY-T1-GE3

BSS138-G

TN2404K-T1-E3

BSS138P,215

NTJD4401NT1G

BSS159NH6327XTSA2

2N7002BK,215

2N7002K

BSS131E6327

FDS4935BZ

2N7002KW

MMBF170LT3

FDC658AP

2N7002T

FDC6420C

FDN352AP