FDMA1032CZ by Onsemi

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FDMA1032CZ

Manufacturer

Onsemi
Manufacturer's Part Number

FDMA1032CZ
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

1395 In Stock

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FDMA1032CZ Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.7 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.068 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	MO-229
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	ESD PROTECTION
Maximum Drain Current (Abs) (ID):	3.7 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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