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BSS138W

Manufacturer

Onsemi
Manufacturer's Part Number

BSS138W
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; No. of Elements: 1; Terminal Form: GULL WING;
Datasheet

Datasheet

2985 In Stock

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BSS138W Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.21 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.34 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.34 W
Maximum Drain-Source On Resistance:	6 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	3.5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Additional Features:	ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	.21 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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