FDN360P_NL by Fairchild Semiconductor

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FDN360P_NL

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDN360P_NL
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Additional Features: LOGIC LEVEL COMPATIBLE;
Datasheet

Datasheet

209 In Stock

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FDN360P_NL Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.08 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	2 A

Category Top Products

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NDS331N by Onsemi

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BSS138-G by Comchip Technology

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FDN304PZ by Onsemi

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2N7002 by Continental Device India

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BSS84 by Nexperia

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ZVN3320FTA by Diodes Incorporated

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FDS6675BZ by Fairchild Semiconductor

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BSS123_R1_00001 by Panjit International

BSS123_R1_00001

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Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.

BSS316NH6327XTSA1 by Infineon Technologies

BSS316NH6327XTSA1

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BSS316NH6327XTSA1 by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 1.4A max drain current. It features a built-in diode, 0.16 ohm on-resistance, and 7pF feedback capacitance. Ideal for applications requiring small outline packages in enhancement mode operation.

MMBFJ112 by National Semiconductor

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FDV304P_NL by Fairchild Semiconductor

FDV304P_NL

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FDV304P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A Drain Current, and 1.1 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This SMALL OUTLINE transistor features GULL WING terminals and SILICON element material.

BS170/D26Z by National Semiconductor

BS170/D26Z

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BS170/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A ID. It operates in ENHANCEMENT MODE, has 3 terminals, and 5 ohm Drain-Source On Resistance. Widely used in electronic circuits for amplification and switching applications due to its SILICON element material and THROUGH-HOLE terminal form.

NDS331N by National Semiconductor

NDS331N

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;