FDMC8030 by Onsemi

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FDMC8030

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    FDMC8030
  • Description
    N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Package Shape: SQUARE; Maximum Pulsed Drain Current (IDM): 50 A;
  • Datasheet

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FDMC8030 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 23 ns
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 14 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 43 ns
JESD-30 Code: S-PDSO-N4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 14 W
Maximum Drain-Source On Resistance: .01 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 21 mJ
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): NOT SPECIFIED

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