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807	$0.431	$348.059

FDMC8030

Manufacturer

Onsemi
Manufacturer's Part Number

FDMC8030
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Package Shape: SQUARE; Maximum Pulsed Drain Current (IDM): 50 A;
Datasheet

Datasheet

807 In Stock

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FDMC8030 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	23 ns
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	50 A
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals:	4
Maximum Power Dissipation (Abs):	14 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	43 ns
JESD-30 Code:	S-PDSO-N4
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	14 W
Maximum Drain-Source On Resistance:	.01 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	21 mJ
Maximum Feedback Capacitance (Crss):	30 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	12 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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