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FDMC8030
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ManufacturerOnsemi
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Manufacturer's Part NumberFDMC8030
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DescriptionN-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; Package Shape: SQUARE; Maximum Pulsed Drain Current (IDM): 50 A;
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Datasheet
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DetailsFDMC8030 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 23 ns |
Maximum Drain Current (ID): | 12 A |
Maximum Pulsed Drain Current (IDM): | 50 A |
Surface Mount: | YES |
Terminal Finish: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 14 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 43 ns |
JESD-30 Code: | S-PDSO-N4 |
No. of Elements: | 2 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 14 W |
Maximum Drain-Source On Resistance: | .01 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 21 mJ |
Maximum Feedback Capacitance (Crss): | 30 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 40 V |
Additional Features: | AVALANCHE RATED |
Maximum Drain Current (Abs) (ID): | 12 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |