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FDV303N-F169
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ManufacturerOnsemi
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Manufacturer's Part NumberFDV303N-F169
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 25 V; Transistor Element Material: SILICON;
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Datasheet
219 In Stock
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DetailsFDV303N-F169 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .68 A |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .35 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .35 W |
| Maximum Drain-Source On Resistance: | .45 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | 488-FDV303N-F169TR |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 25 V |
| Peak Reflow Temperature (C): | 260 |
