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2N7002K
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ManufacturerContinental Device India
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Manufacturer's Part Number2N7002K
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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Details2N7002K Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Feedback Capacitance (Crss): | 10 pF |
Maximum Drain Current (ID): | .34 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | .35 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Reference Standard: | IATF 16949 |
Maximum Power Dissipation Ambient: | .35 W |
Maximum Drain-Source On Resistance: | 1.9 ohm |