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2N7002/HAMR

Manufacturer

Nexperia
Manufacturer's Part Number

2N7002/HAMR
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
Datasheet

Datasheet

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2N7002/HAMR Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.83 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	1727-8645-1 934660832215 1727-8645-2 2156-2N7002/HAMRTR 5202-2N7002/HAMRTR 1727-8645-6
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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