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ZVN2110A
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ManufacturerZetex Plc
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Manufacturer's Part NumberZVN2110A
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;
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Datasheet
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DetailsZVN2110A Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 10 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .32 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .7 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 200 Cel |
Maximum Drain-Source On Resistance: | 4 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 8 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Reference Standard: | CECC |
Maximum Drain Current (Abs) (ID): | .32 A |
Peak Reflow Temperature (C): | 260 |