BSD316SNH6327XTSA1 by Infineon Technologies

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BSD316SNH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSD316SNH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: TIN;
Datasheet

Datasheet

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BSD316SNH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.4 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.5 W
Maximum Drain-Source On Resistance:	.0016 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	7 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

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