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Bulk
| QTY | Unit Price | Ext Price |
| 415 | $0.080 | $33.117 |
2N7000BU
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ManufacturerOnsemi
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Manufacturer's Part Number2N7000BU
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Datasheet
415 In Stock
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Details2N7000BU Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .4 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .2 A |
| Maximum Drain Current (Abs) (ID): | .2 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |