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2N7000BU

Manufacturer

Onsemi
Manufacturer's Part Number

2N7000BU
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

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2N7000BU Technical Details

TYPE	DESCRIPTION
Maximum Power Dissipation (Abs):	.4 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.2 A
Maximum Drain Current (Abs) (ID):	.2 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3

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