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2N7000G

Manufacturer

Rochester Electronics
Manufacturer's Part Number

2N7000G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
Datasheet

Datasheet

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2N7000G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	5 pF
Maximum Drain Current (ID):	.2 A
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	5 ohm

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