2N7002H6327XTSA2 by Infineon Technologies

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2N7002H6327XTSA2

Manufacturer

Infineon Technologies
Manufacturer's Part Number

2N7002H6327XTSA2
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet

Datasheet

178 In Stock

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2N7002H6327XTSA2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	3 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2N7002H6327XTSA2CT 2N7002H6327XTSA2DKR 2N7002H6327XTSA2TR SP000929182
Maximum Feedback Capacitance (Crss):	3 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

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