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BS170

Manufacturer

Lite-on Semiconductor
Manufacturer's Part Number

BS170
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: WIRE; Terminal Position: BOTTOM;
Datasheet

Datasheet

6950 In Stock

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BS170 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	5 ohm

Category Top Products

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2N7002W

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ZXM61N03FTA by Diodes Inc. is a N-CHANNEL FET with 30V DS breakdown voltage, 1.4A max drain current, and 0.22 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. It comes in a small outline package with gull wing terminals for surface mount assembly.

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BSL215CH6327XTSA1

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

BS170F

Diodes Incorporated

Diodes Inc.'s BS170F is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 5 ohm Drain-Source On Resistance, and 150°C Max Operating Temp. Ideal for small outline packages requiring low current and high voltage capabilities.

NDS356AP

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30;

BSS123LT3

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain Current (ID): .17 A;

BSS123_NL

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Fairchild Semiconductor's BSS123_NL is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. The PLASTIC/EPOXY package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

2N7000

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;