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2N7000-G

Manufacturer

Comchip Technology
Manufacturer's Part Number

2N7000-G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
Datasheet

Datasheet

1429 In Stock

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2N7000-G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.625 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.625 W
Maximum Drain-Source On Resistance:	5 ohm
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Peak Reflow Temperature (C):	NOT SPECIFIED

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2N7000-G

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2N7000-G Technical Details

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