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2N7000-G
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ManufacturerComchip Technology
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Manufacturer's Part Number2N7000-G
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
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Datasheet
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Details2N7000-G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .2 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .625 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .625 W |
| Maximum Drain-Source On Resistance: | 5 ohm |
| Maximum Feedback Capacitance (Crss): | 5 pF |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
