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2N7002-T

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

2N7002-T
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 5 ohm;
Datasheet

Datasheet

3845 In Stock

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2N7002-T Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.83 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	IEC-60134
Maximum Drain Current (Abs) (ID):	.3 A

Category Top Products

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FDS5670 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 10A Drain Current, and 0.014 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals. Operating at up to 150°C, it has a max power dissipation of 2.5W and is surface mountable.

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