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2N7002KW_R1_00001

Manufacturer

Panjit International
Manufacturer's Part Number

2N7002KW_R1_00001
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet

Datasheet

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2N7002KW_R1_00001 Technical Details

TYPE	DESCRIPTION
Other Names:	3757-2N7002KW_R1_00001DKR 3757-2N7002KW_R1_00001TR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	5 pF
Maximum Drain Current (ID):	.115 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA LOW RESISTANCE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	3 ohm

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