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SI4532DY
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ManufacturerTemic Semiconductors
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Manufacturer's Part NumberSI4532DY
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DescriptionN-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Maximum Drain Current (ID): 3.9 A; No. of Terminals: 8;
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Datasheet
2004 In Stock
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DetailsSI4532DY Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.9 A |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .065 ohm |