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NTR5198NLT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNTR5198NLT1G
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
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Datasheet
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DetailsNTR5198NLT1G Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2.2 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - annealed |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 1.5 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .205 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Drain Current (Abs) (ID): | 2.2 A |
Peak Reflow Temperature (C): | 260 |