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NTR5198NLT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NTR5198NLT1G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
Datasheet

Datasheet

1259 In Stock

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NTR5198NLT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.205 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-NTR5198NLT1G-OS ONSNTR5198NLT1G NTR5198NLT1GOSTR NTR5198NLT1GOSDKR NTR5198NLT1GOSCT 2832-NTR5198NLT1GTR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	2.2 A
Peak Reflow Temperature (C):	260

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