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BSS306NH6327XTSA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSS306NH6327XTSA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Datasheet
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DetailsBSS306NH6327XTSA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Other Names: | BSS306N H6327-ND BSS306NH6327XTSA1TR BSS306NH6327 BSS306N H6327DKR-ND BSS306N H6327CT BSS306NH6327XTSA1CT SP000928940 BSS306N H6327DKR BSS306NH6327XTSA1DKR BSS306N H6327 BSS306N H6327CT-ND BSS306N H6327TR-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 17 pF |
| Maximum Drain Current (ID): | 2.3 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Maximum Drain-Source On Resistance: | .057 ohm |
| Moisture Sensitivity Level (MSL): | 1 |