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2N7000
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ManufacturerVishay Semiconductors
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Manufacturer's Part Number2N7000
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
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Datasheet
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Details2N7000 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .3 A |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 5 ohm |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-226AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |