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IRF7309TRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRF7309TRPBF
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
Datasheet

Datasheet

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IRF7309TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
Maximum Pulsed Drain Current (IDM):	16 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.05 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	4 A
Peak Reflow Temperature (C):	260

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