FDBL86062_F085 by Fairchild Semiconductor

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FDBL86062_F085

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDBL86062_F085
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet

Datasheet

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FDBL86062_F085 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	73 ns
Maximum Drain Current (ID):	300 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	2
Maximum Power Dissipation (Abs):	429 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	59 ns
JESD-30 Code:	R-PSSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.002 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	352 mJ
Maximum Feedback Capacitance (Crss):	29 pF
JEDEC-95 Code:	MO-299A
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	300 A
Peak Reflow Temperature (C):	260

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