SI7288DP-T1-GE3 by Vishay Intertechnology

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SI7288DP-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI7288DP-T1-GE3
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15.6 W; Minimum DS Breakdown Voltage: 40 V; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

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SI7288DP-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	50 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	15.6 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XDSO-C6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.019 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	5 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	20 A
Peak Reflow Temperature (C):	260

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