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FQB34P10TM

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FQB34P10TM
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Maximum Pulsed Drain Current (IDM): 134 A; Maximum Drain-Source On Resistance: .06 ohm;
Datasheet

Datasheet

2831 In Stock

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FQB34P10TM Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	33.5 A
Maximum Pulsed Drain Current (IDM):	134 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	155 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.06 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	2200 mJ
Other Names:	FQB34P10TM-ND FQB34P10TMTR FQB34P10TMCT 2156-FQB34P10TM-OS FQB34P10TMDKR ONSONSFQB34P10TM
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	33.5 A
Peak Reflow Temperature (C):	245

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