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JANTX2N6796
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ManufacturerUnitrode
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Manufacturer's Part NumberJANTX2N6796
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation Ambient: 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 32 A;
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Datasheet
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DetailsJANTX2N6796 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 105 ns |
| Maximum Drain Current (ID): | 8 A |
| Maximum Pulsed Drain Current (IDM): | 32 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 85 ns |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 25 W |
| Maximum Drain-Source On Resistance: | .18 ohm |
| Maximum Feedback Capacitance (Crss): | 150 pF |
| JEDEC-95 Code: | TO-205AF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Reference Standard: | MILITARY STANDARD (USA) |
