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JANTX2N6796

Manufacturer

Infineon Technologies
Manufacturer's Part Number

JANTX2N6796
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Element Material: SILICON; Minimum Operating Temperature: -55 Cel;
Datasheet

Datasheet

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JANTX2N6796 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.195 ohm
Avalanche Energy Rating (EAS):	75 mJ
JEDEC-95 Code:	TO-205AF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	MIL-19500
Maximum Drain Current (Abs) (ID):	8 A

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