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FDB33N25TM

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDB33N25TM
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 235 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 918 mJ;
Datasheet

Datasheet

1650 In Stock

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FDB33N25TM Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	33 A
Maximum Pulsed Drain Current (IDM):	132 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	235 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.094 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	918 mJ
Other Names:	2156-FDB33N25TM-OS FDB33N25TMDKR FAIFSCFDB33N25TM FDB33N25TMCT FDB33N25TMTR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Additional Features:	FAST SWITCHING, AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	33 A
Peak Reflow Temperature (C):	260

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