Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,744	$16.350	$44,863.028

JANS2N2907AUB

Manufacturer

Vpt Components
Manufacturer's Part Number

JANS2N2907AUB
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;
Datasheet

Datasheet

2744 In Stock

Popular Products

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BSS138

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

Details

BAV99

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

Details

2N2222A

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;

Details

1N4148WS

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LAN8720AI-CP-TR

Microchip Technology

LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.

Details

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Details

C1206C104K5RACTU

KEMET Corporation

KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.

Details

M39029/56-351

Amphenol

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;

Details

DS18B20Z+T&R

Analog Devices

DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.

Details

1N4148

Crimson Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LL4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

Details

1N4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS138

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;

Details

STM32F407VGT6

STMicroelectronics

STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).

Details

LL4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM7805CT

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

Details

JANS2N2907AUB Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.6 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum Operating Temperature:	-65 Cel
No. of Terminals:	3
Qualification:	Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-CDSO-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Maximum Collector-Base Capacitance:	8 pF
Reference Standard:	MIL-19500
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

MMBTH69LT3

Onsemi

MMBTH69LT3 by Onsemi is a PNP RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 15V and fT of 2000 MHz. Ideal for amplifier applications in the ultra-high frequency band, this transistor comes in a small outline package with gull wing terminals.

2N2907AUA

Vpt Components

RF Small Signal Bipolar Transistors;

SS9018I

Onsemi

SS9018I by Onsemi is an NPN BJT transistor for RF applications. With a max VCEsat of 0.5V, it operates in L Band with fT at 1100MHz. Ideal for amplifiers, it has hFE of 132 and can handle IC up to 0.05A at 150 °C max temp.

CPH6021-TL-H

Onsemi

CPH6021-TL-H by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.

MSC2295-CT1

Onsemi

The Onsemi MSC2295-CT1 is an NPN RF BJT transistor with a max operating temp of 150 °C. It has a min hFE of 110 and max fT of 150 MHz, making it ideal for amplifier applications. With a small outline package style and Gull Wing terminals, it's suitable for surface mount designs.

BFU760F,115

NXP Semiconductors

The NXP Semiconductors BFU760F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min DC current gain of 155. It is ideal for surface mount applications in circuits requiring a max collector current of 0.07A, featuring silicon germanium transistor element material and tin terminal finish.

2N2222

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

KSC1393R

Onsemi

KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.

BFT92

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

BFR360FH6765XTSA1

Infineon Technologies

BFR360FH6765XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14 GHz. It has a collector-emitter voltage of 6V and collector current of 0.035A, making it suitable for amplifier applications in the S band. This surface-mount transistor comes in a small outline package with 3 terminals.

BFP840ESDH6327XTSA1

Infineon Technologies

BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.

2SC4853A-4-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6;

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

2SC5347AF-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;

2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

MPS6507RLRM

Onsemi

MPS6507RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 800MHz. It is commonly used as an amplifier in applications requiring high-frequency signal amplification. The transistor has a max operating temperature of 150 °C, making it suitable for various electronic devices.

MMBR5031LT1

Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;

2N2368

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

SD1891-03

STMicroelectronics

SD1891-03 by STMicroelectronics is a NPN BJT with 15V VCEO, 1.1A IC, and 8.8W Ptot. Ideal for L Band applications, this transistor has a hFE of 15 and operates up to 200 °C. Its ceramic-metal package with flat terminals makes it suitable for flange mount configurations.

934047470115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;