Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,305	Request Pricing	-

MCH4013-TL-E

Manufacturer

Onsemi
Manufacturer's Part Number

MCH4013-TL-E
Description

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);
Datasheet

Datasheet

2305 In Stock

Popular Products

1N4148

Unitrode

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

STM32H743XIH6

STMicroelectronics

STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.

Details

BAV99

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2902037

Phoenix Contact

MODULAR TERMINAL BLOCK;

Details

SMBJ18CA

Zowie Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

Vishay Intertechnology

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;

Details

2N2222A

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

Details

M39029/58-360

Defense Logistics Agency

CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;

Details

NE555D

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BAV99

Infinex

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Good-ark Electronics

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;

Details

2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;

Details

SS14

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

Details

C0603X104K5RACAUTO

KEMET Corporation

C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.

Details

MURS160T3G

Onsemi

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

Details

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

2N7002

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

Details

MCH4013-TL-E Technical Details

TYPE	DESCRIPTION
Terminal Finish:	Tin/Bismuth (Sn/Bi)
JESD-609 Code:	e6
Moisture Sensitivity Level (MSL):	1

Category Top Products

2N5179

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

HFA3135IHZ96

Renesas Electronics

The Renesas Electronics HFA3135IHZ96 is a PNP RF BJT transistor with 0.25V VCEsat, 7000MHz fT, and 4V VCEO. Ideal for amplifier applications in the UHF band, it features a small outline package with Gull Wing terminals and operates b/w -40 to 85°C.

HFA3096BZ

Renesas Electronics

HFA3096BZ by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and ultra-high frequency band. It is used for amplifier applications in small outline packages with 16 terminals. With a max fT of 8000 MHz, it offers high performance in compact designs.

BF959RLRE

Onsemi

BF959RLRE by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operating temp up to 150 °C makes it suitable for various through-hole configurations.

50A02CH-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;

MPSH10

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;

BFU760F,115

NXP Semiconductors

The NXP Semiconductors BFU760F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min DC current gain of 155. It is ideal for surface mount applications in circuits requiring a max collector current of 0.07A, featuring silicon germanium transistor element material and tin terminal finish.

MSC82001

STMicroelectronics

STMicroelectronics' MSC82001 is a NPN BJT transistor with 2 terminals, ideal for L Band applications. It has a max power dissipation of 7W and max collector current of 0.2A, making it suitable for amplifier circuits in high-frequency settings. The package style is flange mount with a ceramic-metal sealed co-fired body material.

MPSH10

Onsemi

The Onsemi MPSH10 is an NPN RF BJT transistor with a max fT of 650 MHz, ideal for amplifier applications. With a max IC of 0.1A and hFE of 60, it operates at up to 150°C. Its package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

BFR181E6327HTSA1

Infineon Technologies

BFR181E6327HTSA1 by Infineon Technologies is a NPN RF BJT with 12V VCEO, 0.02A IC, and 8000MHz fT. Ideal for L Band applications, it features a small outline package with gull wing terminals for surface mount amplifiers. AEC-Q101 compliant, it has 0.45pF max CCB capacitance and silicon transistor element.

MMBTH10LT1G

Onsemi

MMBTH10LT1G by Onsemi is an NPN RF transistor with a max operating temperature of 150°C. It has a small outline package style and can handle a max collector-emitter voltage of 25V. This transistor is commonly used in ultra high frequency band applications.

BFR92AW

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

TIS87

Texas Instruments

TIS87 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.4W, hFE of 30, and fT of 500MHz. The package is cylindrical with wire terminals and can handle up to 45V collector-emitter voltage at 150°C operating temperature.

MPS3563RLRP

Onsemi

MPS3563RLRP by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a Vceo of 12V, and IC of 0.05A. Ideal for ultra-high frequency amplifier applications due to its low collector-base capacitance and single configuration in a cylindrical package.

CA3086

Renesas Electronics

CA3086 by Renesas Electronics is a NPN BJT with 6 elements and 14 terminals. It operates in the very high frequency band up to 550MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature range from -55°C to 125°C, it offers reliable performance in various electronic systems.

BSX29

STMicroelectronics

BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.

JAN2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MMBTH10Q-7-F

Diodes Incorporated

RF Small Signal Bipolar Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

BFP740E6327HTSA1

Infineon Technologies

BFP740E6327HTSA1 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for C band applications. It has a max operating temp of 150°C, fT of 44 GHz, and can handle up to 0.045 A collector current. This small outline transistor is designed for amplifier circuits requiring high frequency performance.

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.