BFP740E6327HTSA1 by Infineon Technologies

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BFP740E6327HTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFP740E6327HTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 44000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
Datasheet

Datasheet

44 In Stock

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BFP740E6327HTSA1 Technical Details

TYPE	DESCRIPTION
Minimum Power Gain (Gp):	19.5 dB
Nominal Transition Frequency (fT):	44000 MHz
Other Names:	BFP740E6327 BFP740E6327INCT BFP 740 E6327-ND BFP740E6327HTSA1DKR BFP740E6327HTSA1CT BFP740E6327INDKR-ND BFP740E6327INTR-ND BFP740E6327XT BFP740E6327INCT-ND SP000016424 BFP740E6327INTR BFP740E6327HTSA1TR BFP 740 E6327 BFP740E6327INDKR
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.045 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM CARBON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	160
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.16 W
Maximum Collector-Emitter Voltage:	4 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	C BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.08 pF

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