BFP843H6327XTSA1 by Infineon Technologies

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238	$0.056	$13.340

BFP843H6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFP843H6327XTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .055 A; Highest Frequency Band: C BAND;
Datasheet

Datasheet

238 In Stock

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BFP843H6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.055 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.125 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	C BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	EMITTER
Moisture Sensitivity Level (MSL):	1
Other Names:	BFP 843 H6327 BFP843H6327XTSA1CT 2156-BFP843H6327XTSA1 SP001062586 BFP843H6327XTSA1TR IFEINFBFP843H6327XTSA1 BFP843H6327XTSA1DKR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	150
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	2.25 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	5.23 pF

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