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BFP843H6327XTSA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBFP843H6327XTSA1
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .055 A; Highest Frequency Band: C BAND;
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Datasheet
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DetailsBFP843H6327XTSA1 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .055 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | .125 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Highest Frequency Band: | C BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | EMITTER |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 150 |
JESD-609 Code: | e3 |
Maximum Collector-Emitter Voltage: | 2.25 V |
Additional Features: | LOW NOISE |
Maximum Collector-Base Capacitance: | 5.23 pF |