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TIS110
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ManufacturerTexas Instruments
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Manufacturer's Part NumberTIS110
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .8 A;
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Datasheet
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DetailsTIS110 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 350 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .8 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | .36 W |
| Maximum Collector-Emitter Voltage: | 40 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Collector-Base Capacitance: | 6.5 pF |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
