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MPSH10G
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ManufacturerOnsemi
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Manufacturer's Part NumberMPSH10G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
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Datasheet
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DetailsMPSH10G Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 650 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .1 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .35 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-T3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | THROUGH-HOLE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 60 |
JESD-609 Code: | e1 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 25 V |
Maximum Collector-Base Capacitance: | .7 pF |
Peak Reflow Temperature (C): | 260 |