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MPSH10G
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ManufacturerOnsemi
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Manufacturer's Part NumberMPSH10G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
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Datasheet
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DetailsMPSH10G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 650 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .35 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-T3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | THROUGH-HOLE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Other Names: | MPSH10GOS |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 60 |
| JESD-609 Code: | e1 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 25 V |
| Maximum Collector-Base Capacitance: | .7 pF |
| Peak Reflow Temperature (C): | 260 |
