Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,057	Request Pricing	-

BFQ256

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFQ256
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
Datasheet

Datasheet

2057 In Stock

Popular Products

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

BSS138-TP

Micro Commercial Components

BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.

Details

M24308/2-1F

Bel Fuse

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

Details

2N2222A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM2931Z-5.0RPG

Onsemi

LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.

Details

LL4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

Semitron

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

First Components International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

Details

LL4148

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

Details

SS14

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

STM32F405RGT6

STMicroelectronics

STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.

Details

STM32H743IIT6

STMicroelectronics

STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).

Details

1N4148WS

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Shandong Yiguang Electronic Joint Stock

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BFQ256 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	1300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	20
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	2 W
Maximum Collector-Emitter Voltage:	65 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	HIGH RELIABILITY
Maximum Operating Temperature:	175 Cel
Maximum Collector-Base Capacitance:	1.6 pF
Case Connection:	COLLECTOR

Category Top Products

PN5179

Onsemi

PN5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.6W, operating temperature up to 150 °C, and a transition frequency of 900MHz.

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.

BF240RL1

Onsemi

The Onsemi BF240RL1 is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. Ideal for amplifier applications, it has a max collector current of 0.025A and low capacitance at 0.34pF. The through-hole package style makes it suitable for various electronic designs.

BFR93A

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

MMBTH10

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

BFR740L3RHE6327XTSA1

Infineon Technologies

BFR740L3RHE6327XTSA1 by Infineon Technologies is an NPN RF BJT for X Band applications. It has a max fT of 42 GHz, 0.03A IC, and 4V VCE. This single configuration transistor in chip carrier package is ideal for amplifier circuits requiring high frequency operation.

2N3643

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

3001

Microsemi

Microsemi 3001 is an NPN BJT transistor for amplifier applications. Features include S band frequency, max operating temp of 200°C, and 0.2A collector current. Its ceramic-metal package with flange mount shape makes it suitable for RF signal amplification in various electronic devices.

BFY740B01ESB4SA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

HFA3096BZ

Renesas Electronics

HFA3096BZ by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and ultra-high frequency band. It is used for amplifier applications in small outline packages with 16 terminals. With a max fT of 8000 MHz, it offers high performance in compact designs.

NSVMMBTH81LT1G

Onsemi

NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.

SD1420

STMicroelectronics

SD1420 by STMicroelectronics is an NPN BJT transistor with a max power dissipation of 8.75W, suitable for amplifier applications in the ultra-high frequency band. It has a min DC current gain of 20 (hFE), operates at temperatures up to 200 °C, and features a max collector-emitter voltage of 28V.

SD1134-05

STMicroelectronics

SD1134-05 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the VHF band. It has a max power dissipation of 5W and can handle up to 0.75A collector current. Ideal for high-frequency applications requiring a single configuration transistor in a round plastic package.

MPS5179RLRE

Onsemi

MPS5179RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and low capacitance at 1pF, housed in a cylindrical package suitable for very high-frequency bands.

BFR92

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

MSC2295-BT1

Onsemi

The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.

BFR92PE6327

Infineon Technologies

BFR92PE6327 by Infineon Technologies is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 5000 MHz and can handle a collector current of 0.03 A, making it ideal for L Band switching applications. This surface mount transistor comes in a small outline package with gull wing terminals.

NE85633-T1B-A

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

2N3866

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;