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KST10MTF

Manufacturer

Onsemi
Manufacturer's Part Number

KST10MTF
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet

Datasheet

2351 In Stock

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KST10MTF Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Maximum Collector-Base Capacitance:	.7 pF
Peak Reflow Temperature (C):	260

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