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934067694115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934067694115
Description

RF Small Signal Bipolar Transistors;
Datasheet

Datasheet

4538 In Stock

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CRCW04020000Z0EDHP

Vishay Intertechnology

Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.

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1N4148

Multicomp Pro

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

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BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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2N7002

Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

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STM32F103C8T6

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STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.

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SS14

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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M39029/58-360

Carlisle Interconnect Technologies

GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;

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1N4148WS

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

Taitron Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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1N4148

Terry Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

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MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

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SS14

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;

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LL4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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0460-202-16141

TE Connectivity

TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.

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BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

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BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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SS14

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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BAV99LT1G

Onsemi

BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.

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Category Top Products

15GN01CA-TB-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

BFR193E6327HTSA1

Infineon Technologies

BFR193E6327HTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and operates in the ultra-high frequency band up to 8000 MHz. This transistor is commonly used as an amplifier in applications requiring high-frequency signal amplification.

MPSH11RL

Onsemi

MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.

A5T3572

Texas Instruments

A5T3572 by Texas Instruments is an NPN BJT transistor with 3 terminals, 0.05 A max collector current, and 1000 MHz transition frequency. Ideal for amplifier applications in the ultra high-frequency band, it has a max power dissipation of 0.5 W and operates up to 150°C.

BFP840ESDH6327XTSA1

Infineon Technologies

BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

BF224RL1

Onsemi

BF224RL1 by Onsemi is a NPN RF BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for very high frequency band applications due to its single configuration and cylindrical package style. Operates up to 150 °C with through-hole terminals for easy installation.

2SC2814-5

Onsemi

Onsemi's 2SC2814-5 is an NPN RF BJT transistor with a max fT of 320 MHz. It has a max IC of 0.03 A and hFE of 135, suitable for amplifier applications in the VHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.

CPH6021

Onsemi

CPH6021 by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the ultra-high frequency band with a max fT of 10,000 MHz. With a max IC of 0.1 A and hFE of 60, it has a package style of small outline and can handle up to 0.7 W power dissipation at 150 °C.

MRF237

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

SD1438

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);

PN5179D26Z

Fairchild Semiconductor

Fairchild Semiconductor's PN5179D26Z is an NPN BJT transistor with a max collector-emitter voltage of 12V and a transition frequency of 900MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max power dissipation of 0.6W. The package style is cylindrical with a matte tin terminal finish, suitable for through-hole mounting at temperatures up to 150°C.

MPS918

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;

KSC1674

Onsemi

The Onsemi KSC1674 is an NPN RF BJT transistor with a max VCEsat of 0.3V and fT of 600MHz, ideal for amplifier applications in the very high frequency band. It has a max IC of 0.02A, hFE of 40, and operates up to 150 °C, housed in a cylindrical package with through-hole terminals.

BFR96

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

BFY90

Siemens

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;

BFP720FH6327XTSA1

Infineon Technologies

BFP720FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for X Band applications. It has a max fT of 45 GHz and can handle a collector-emitter voltage of 4V. This small outline package transistor is ideal for amplifier circuits in high-frequency applications.

BLF871,112

Ampleon Netherlands B V

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.