Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,675	Request Pricing	-

2N4997

Manufacturer

Texas Instruments
Manufacturer's Part Number

2N4997
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

3675 In Stock

Popular Products

2N7002

Kec

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

FDN306P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

Details

LM317T

Inchange Semiconductor

Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;

Details

SS495A-SP

Honeywell Sensing And Control

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.

Details

C1206C104K5RACTU

KEMET Corporation

KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.

Details

BAV99-7-F

Diodes Incorporated

Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

Details

C1206C104M5RACTU

KEMET Corporation

KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

LL4148

Secos

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDLL4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

EU2B-YS2J03C

Idec

ROTARY SWITCH;

Details

SMBJ18CA

First Components International

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

STM8S003F3P6TR

STMicroelectronics

STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.

Details

BAV99

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

261

Mercury Systems

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

Details

LL4148

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

M39029/58360

Souriau

CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;

Details

BAV99

Sprague Electric

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;

Details

LM358N

Texas Instruments

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

Details

2N2222A

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N4997 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	30
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	18 V
Maximum Collector-Base Capacitance:	.65 pF
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

BFM520,115

NXP Semiconductors

NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.

MMBTH81D87Z

National Semiconductor

MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.

934066878225

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 53000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A;

MMBTH24LT1

Onsemi

MMBTH24LT1 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance of 0.45pF.

MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

BFR93AR

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;

MPSH10

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

2SC5488A-TL-H

Onsemi

Onsemi's 2SC5488A-TL-H is an NPN RF BJT with hFE of 90, fT of 5000 MHz, and IC of 0.07 A. Ideal for high-frequency applications in surface-mount configurations due to its low power dissipation and high operating temperature capability up to 150 °C.

MPS3563ZL1

Onsemi

MPS3563ZL1 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical and is ideal for RF signal amplification.

934047460135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

CA3083M96

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;

MPS3640

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

BF240RLRA

Onsemi

BF240RLRA by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and max operating temp of 150 °C. Ideal for amplifier applications, it has a fT of 600MHz and low collector-base capacitance at 0.34pF.

2N2222

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BFR92AT/R

NXP Semiconductors

NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.

MMBTH81_NL

Fairchild Semiconductor

MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.

HFA3102B96

Harris Semiconductor

HFA3102B96 by Harris Semiconductor is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 8V and a max collector current of 0.03A. It is commonly used as an amplifier in RF applications, specifically in the C band frequency range.

CA3146E

Intersil

Intersil's CA3146E is a NPN BJT with 5 elements, 14 terminals, and fT of 500 MHz. It operates in the VHF band as an amplifier with max IC of 0.05 A and VCE of 30V. The transistor is housed in a plastic/epoxy package with through-hole terminals for RF applications.