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934047450115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934047450115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 17000 MHz; Maximum Collector Current (IC): .0036 A; Qualification: Not Qualified;
Datasheet

Datasheet

2219 In Stock

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DS18B20Z+

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RC0805FR-0710KL

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LM358N

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BAV99

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MBRS3200T3G

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SMBJ18CA

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934047450115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	17000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.0036 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Terminal Finish:	PURE TIN
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	4.5 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW NOISE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	EMITTER

Category Top Products

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2N3643

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CPH6074

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CPH6074 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band up to 1200 MHz, with a max collector-emitter voltage of 15V and power dissipation of 0.5W. The package is a small outline with Gull Wing terminals, making it ideal for surface mount applications.

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TIS111 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and max current of 0.8A, ideal for switching applications. With a max power dissipation of 0.36W and transition frequency of 350MHz, it operates at up to 150°C making it suitable for various RF small signal tasks.

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BFY90

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NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.

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KSC1730Y by Onsemi is an NPN RF BJT with a max VCEsat of 0.5V, hFE of 120, and fT of 1100MHz. Ideal for amplifier applications in the UHF band due to its high transition frequency and low collector-emitter voltage. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.

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