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934064616115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934064616115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

3711 In Stock

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MBR130T1G

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MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

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AT90CAN128-16AU

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AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.

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ABS10-32.768KHZ-T

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Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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LM2931AZ-5.0RPG

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LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.

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1N5819HW-7-F

Diodes Incorporated

1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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1N4148WS

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N7002

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1N4148WS

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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DS18B20U

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TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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LM358N

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

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934064616115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	25000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
No. of Terminals:	4
Maximum Collector-Emitter Voltage:	2.8 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	LOW NOISE
Highest Frequency Band:	L BAND

Category Top Products

2N2907

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

S822T

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; JESD-609 Code: e3;

NE85634-T1-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

CA3083Z

Renesas Electronics

CA3083Z by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450 MHz, with a max collector-emitter voltage of 15V and collector current of 0.1A. The package style is in-line, with a max power dissipation of 0.5W at 150°C.

BFW17A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .15 A;

MMBTH10LT1

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Shape: RECTANGULAR; No. of Terminals: 3;

55GN01FA-TL-H

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The Onsemi 55GN01FA-TL-H is an NPN RF BJT with a max power dissipation of 0.25W, fT of 3000MHz, and hFE of 100. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.

934063131115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .025 A; Additional Features: HIGH RELIABILITY;

SD1012-3

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NPN; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;

2N4260

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2N4260 by Texas Instruments is a PNP BJT for RF applications. With hFE of 30, it operates at 200°C with VCE of 15V and IC of 0.03A. Ideal for amplifiers in the UHF band, it has a fT of 1.6MHz and Pd max of 0.2W in a cylindrical package with isolated case connection.

MMBTH81

Onsemi

The Onsemi MMBTH81 is a PNP RF BJT with 3 terminals, operating in the VHF band. It has a max power dissipation of 0.35W and transition frequency of 600MHz. Ideal for amplifier applications due to its high collector-emitter voltage and small outline package style.

CA3146E

Harris Semiconductor

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BFU520VL

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NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.

BFP843H6327XTSA1

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BFP843H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max power dissipation of 0.125W, hFE of 150, and operates up to 150°C. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and low collector-emitter voltage of 2.25V.

MPS918RLRM

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MPS918RLRM by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at a max temp of 150 °C and has a max Vce of 15V, making it suitable for ultra-high frequency amplifier applications. The package style is cylindrical with through-hole terminals and a plastic/epoxy body material.

Bulk

934064616115

3711 In Stock

Popular Products

LM317T

MBR130T1G

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1N5819HW-7-F

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934064616115 Technical Details

Category Top Products

2N2907

S822T

NE85634-T1-A

CA3083Z

BFW17A

MMBTH10LT1

55GN01FA-TL-H

934063131115

SD1012-3

2N4260

MMBTH81

CA3146E

BFU520VL

BFP843H6327XTSA1

MPS918RLRM

2N4427

HFA3134IHZ96

2N3866A

2N3569

MMPQ2369G