HFA3127RZ by Integrated Device Technology

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HFA3127RZ

Manufacturer

Integrated Device Technology
Manufacturer's Part Number

HFA3127RZ
Description

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
Datasheet

Datasheet

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HFA3127RZ Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	8000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.037 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 5 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	16
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-PQCC-N16
No. of Elements:	5
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	2
JEDEC-95 Code:	MO-220VEED-2
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	8 V
Additional Features:	LOW NOISE
Peak Reflow Temperature (C):	260

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