Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,537	Request Pricing	-

BFR520T

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFR520T
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;
Datasheet

Datasheet

2537 In Stock

Popular Products

SMBJ18CA

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

Details

LIS2DH12TR

STMicroelectronics

LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.

Details

LL4148

First Components International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

BAV99

Gec Plessey Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Electronic Devices

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

M39029/58360

Souriau

CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;

Details

LD1117S33TR

STMicroelectronics

LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.

Details

2N2222A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Hitachi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

Texas Instruments

ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.

Details

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

Details

2N2222A

Vishay Sprague

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;

Details

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148WT

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

BFR520T Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	9000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.07 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY, LOW NOISE
Peak Reflow Temperature (C):	260

Category Top Products

SMA5101

Onsemi

SMA5101 by Onsemi is an NPN RF BJT with 4 elements and 6 terminals. It operates in KU band, with max power dissipation of 0.28W and max collector-emitter voltage of 6V. Ideal for high-frequency applications requiring small outline packages and flat terminal forms.

EMX5T2R

ROHM

ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.

BFS17NQTA

Diodes Incorporated

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

MMBTH24

Onsemi

MMBTH24 by Onsemi is a NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 400MHz. It's used in amplifier applications, operates at -55 to 150 °C, and has a max power dissipation of 0.225W.

934061289135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;

CA3083M

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

NSVF4009SG4T1G

Onsemi

NSVF4009SG4T1G by Onsemi is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in L Band. It has a max power dissipation of 0.12W, hFE of 50, and operates b/w -55 to 150 °C. Ideal for surface mount designs with a small outline package style.

BFR92ALT1

National Semiconductor

BFR92ALT1 by National Semiconductor is an NPN RF BJT with a max power dissipation of 0.273W, min hFE of 40, and max IC of 0.025A. It's used in surface mount applications for its silicon element material and tin/lead terminal finish.

BFR93A

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

934064615115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.

BSX39

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

NSF2250WT1

Onsemi

NSF2250WT1 by Onsemi is a NPN BJT transistor with 3 terminals, operating at max 150 °C. It has a transition frequency of 2300 MHz and can handle up to 0.05 A collector current. Ideal for ultra high frequency amplifier applications in small outline packages.

BFR96

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

BFR520

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;

MCH4017-TL-H

Onsemi

MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.

MMBTH81LT3

Onsemi

The Onsemi MMBTH81LT3 is a PNP RF BJT with 600 MHz fT, 20V VCEO, and 0.85pF CCB. Ideal for UHF applications, it features a Gull Wing terminal form in a small outline package. Suitable for high-frequency designs requiring compact size and low capacitance.

MPS5179RLRM

Onsemi

MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

BFP740H6327XTSA1

Infineon Technologies

BFP740H6327XTSA1 by Infineon Technologies is an NPN RF BJT with a Gp of 19.5 dB, ideal for amplifier applications in the C band. It features a hFE of 160, fT of 44 GHz, and can operate b/w -55 to 150°C. The transistor has a max Vce of 4.2V and IC of 0.045A, making it suitable for high-frequency amplification needs.