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BFG35,115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFG35,115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;
Datasheet

Datasheet

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BFG35,115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	4000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	1 W
Moisture Sensitivity Level (MSL):	1
Other Names:	933919910115 BFG35115 568-6187-1 568-6187-2 BFG35 T/R-ND 568-6187-6 BFG35,115-ND BFG35 T/R 954-BFG35115
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	25
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	18 V
Reference Standard:	CECC
Peak Reflow Temperature (C):	260

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