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BFR93AW

Manufacturer

Vishay Telefunken
Manufacturer's Part Number

BFR93AW
Description

RF Small Signal Bipolar Transistors; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
Datasheet

Datasheet

3679 In Stock

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RC0805FR-0710KL

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M24308/2-1F

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BAV99

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EU2B-YS3303C

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BFR93AW Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Surface Mount:	YES

Category Top Products

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NSVF6001SB6T1G by Onsemi is an NPN BJT transistor with 6 terminals, operating at -55 to 150 °C. It has a max collector-emitter voltage of 12V and fT of 6700 MHz, suitable for ultra-high frequency amplifier applications in AEC-Q101 standard environments.

CA3086M

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TIS128

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TIS128 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 6.5MHz. With a max operating temp of 175°C and VCE of 45V, it's suitable for high-frequency circuit designs.

2N2369A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;

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BFT92,215

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RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;

HFA3096BZ

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BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.

MPS6507RLRE

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MPS6507RLRE by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and max operating temp of 150 °C. Ideal for amplifier applications, it has a max collector current of 0.05A and transition frequency of 800MHz, housed in a cylindrical package with through-hole terminals.